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| HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Analog Switch Applications Unit: mm * * * * High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of a compact package. Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 50 10 50 200 150 -55 to 150 Unit V V mA mW C C JEDEC JEITA TOSHIBA Weight: 6.8 mg 2-2J1C Note: TOTAL rating Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth iYfsi RDS (ON) Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 mA, VGS = 0 V VDS = 50V, VGS = 0 V VDS = 5V, ID = 0.1 mA VDS = 5V, ID = 10 mA ID = 10 mA, VGS = 4.0 V VDS = 5 V, VGS=0 V, f = 1 MHz VDS = 5 V, VGS=0 V, f = 1 MHz VDS = 5 V, VGS=0 V, f = 1 MHz VDD = 5 V, ID = 10 mA, VGS = 0 to 4.0 V VDD = 5 V, ID = 10 mA, VGS = 0 to 4.0 V Min 3/4 50 3/4 0.8 20 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 20 6.3 1.3 5.7 0.11 0.15 Max 1 3/4 1 2.5 3/4 50 3/4 3/4 3/4 3/4 Unit mA V mA V mS W pF pF pF ms 3/4 1 2002-01-16 HN1K04FU Equivalent Circuit (top view) 6 5 4 Marking 6 5 4 Q1 Q2 KH 1 (Q1, Q2 common) 2 3 1 2 3 Switching Time Test Circuit (a) Test circuit ID 4V IN 50 W RL OUT VDD = 5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25C (b) VIN VGS 4V 10% 90% 0 VDD 10 ms VIN (c) VOUT VDS VDS (ON) 90% tr ton toff 10% VDD tf 2 2002-01-16 HN1K04FU (Q1, Q2 common) 60 3.0 ID - VDS Common source 1.2 4.0 2.0 1.8 0.8 ID - VDS (low voltage region) Common source 1.7 Ta = 25C (mA) 40 2.7 Drain current ID Drain current ID (mA) 50 4.0 Ta = 25C 1.0 1.65 0.6 VGS = 1.6 V 0.4 1.55 0.2 1.5 30 2.4 20 VGS = 2.1 V 10 1.8 0 2 4 6 8 1.5 10 12 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) 50 30 IDR - VDS Common source VGS = 0 50 30 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 ID - VGS Ta = 100C Common source VDS = 5 V (mA) Drain reverse current IDR 5 3 D G IDR S 1 0.5 0.3 0.1 0.05 0.03 0.01 0 Drain current ID (mA) 10 Ta = 25C 25 -25 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 1 2 3 4 5 6 7 8 9 Drain-source voltage VDS (V) Drain-source voltage VGS (V) iYfsi - ID 100 Common 50 source 100 50 C - VDS Common source VGS = 0 f = 1 MHz Ta = 25C 10 Ciss 5 3 Coss 1 0.5 Crss Forward transfer admittance iYfsi (mS) 30 10 5 3 0.5 Capacitance C (pF) 3 5 10 30 50 100 VDS = 5 V Ta = 25C 30 1 0.3 0.1 0.3 0.5 1 3 5 10 30 50 Drain current ID (mA) Drain-source voltage VDS (V) 3 2002-01-16 HN1K04FU (Q1, Q2 common) VDS (ON) - ID 3000 Common 1000 source 1000 t - ID Drain-source on voltage VDS (ON) (mV) (ns) VGS = 4 V 500 300 Ta = 25C 300 toff tf Switching time t 100 50 30 100 ton tr ID VOUT VIN 10 ms 50 9 RL 30 4 V 0 10 5 0.5 1 3 10 30 100 10 0.3 VIN 1 D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common source VDD = 5 V Ta = 25C 10 50 Drain current ID (mA) Drain current ID (mA) PD* - Ta 350 300 Drain power dissipation PD* (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) *: TOTAL rating 4 2002-01-16 HN1K04FU RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-01-16 |
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